, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BU603 description ? collector-emitter sustaining voltage- : vceo(sus)=550v(min) ? high switching speed applications ? designed for use in power supplies and deflection circuits for color receivers and monitors absolute maximum ratings(ta=25"c) symbol vces vceo vebo ic icm ib ibm ie ifm pc t) tstg parameter collector-emitter voltage-vbe= 0 collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak emitter current-continuous emitter current-peak collector power dissipation tc=25'c junction temperature storage ttemperature range value 1350 550 6 5 8 2 4 7 12 100 150 -65-150 unit v v v a a a a a a w "c c thermal characteristics symbol rth j-c parameter thermal resistance.junction to case max 1.25 unit ?c/w w i , i 1 2 3 2 ?<; pin 1.base 2. collector 3. emitter to-220c package j fly a t 4 ^,._a-^. j-ert mloo^ * h '"k k 1 1 , h- r c 1 t~ rr 3h : dim a b c d f g h j k l 0 r s u v s~ ;d 5o4'' i mm win 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 _\ r* "? j nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BU603 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 ices iebo hpe-1 hfe-2 hpe-3 hfe-4 parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain dc current gain conditions .lc= 100ma; ib=0 lc= 2a; ib= 0.33a lc=4a; ib=1.33a vce= vcesmax; vbe= 0 vce= vces?*; vbe= 0;tj= 125c veb= 6v; lc= 0 lc=10ma;vce=5v lc=1a; vce=5v lc=2a; vce=2v |c= 4a ; vce= 3v min 550 6 8 6 3 typ. max 2 3 1 2 1 unit v v v ma ma switching times; resistive load ton ts tf turn-on time storage time fall time lc= 2a; lbi= -ib2= 0.33a 0.5 6.0 0.7 n s p s u s
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